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ISSN: 2634-8853 | Open Access

Journal of Engineering and Applied Sciences Technology

Impact of PVT Variations on Optimizing Silicon Power
Author(s): Apoorva Reddy Proddutoori
The scaling of CMOS technology faces challenges as the demand rises, but FinFETs emerging as a vital alternative for 22nm technology node and lower. Otherwise, FinFETs tend to have multiple PVT variations, making static timing analysis (STA) more flexible and suitable to analyze the timing delay of the logic generation. Device simulation and statistical temporal analysis are used to derive PVT variation models for FinFET-based standard cell designs. Mixing different FinFET design styles shows promise in optimizing delays and leakage, as FinFETs offer better control of short-channel effects and processing scalability. Furthermore, lowering clock skew is also a prime design aspect to consider. However, as technology scales to smaller devices, process, voltage, and temperature (PVT) variations make minimizing clock distortion very difficult. To mitigate the effects of PVT variations, many previous works proposed a Post Silicon Tuning (PST) architecture to dynamically balance the skew of the clock tree. In this paper, we will disclose the details of clock tree synthesis optimizations and FinFET logic developments minimizing PVT variations.